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Zinc doped Ferric Oxide ( ) thin films have been prepared by low cost, ecologically approachable Spin-coating procedure to prepare p-type semiconductor for forming :Zn doped homo-junction photo-electrode for solar water splitting to generate H2 fuels. is naturally n-type semiconductor, the challenge is to form p-type semiconductor. To take this challenge, Iron(II) chloride, also known as ferrous chloride ( ) and .2 O were assorted with Ethanol for preparing Zn-doped α- solution at different concentrations which is served as source solution. In this research, the effect of optical (Absorption Coefficient, Transmittance and Optical Band-gap) properties of the prepared thin films were inspected at three different layered with the as-deposited films has been annealed at 450⁰C and 550⁰C. The optical properties has been taken with the frequency range of 300 to 1000 nm on a glass substrates. The investigated result of this study stated that both Absorption Coefficient and the Transmittance remain almost constant in the visible region for different doping concentrations. Another, Optical band gaps have been measured from energy band graph at different concentrations and varied temperature for post annealed films and its value varied from 1.7 to 1.8 eV.