Structural and Optical Analysis of Chemically Deposited ZnS Thin Films for Optoelectronic Devices Applications
A. ARIFA Hassan *
Université Abdou Moumouni de Niamey, Laboratoire CEMR, Équipe de Recherche, Matériaux et Physique Nucléaire, BP: 10662 Niamey, Niger.
ABOUBACAR Almoustapha
Université Abdou Moumouni de Niamey, Laboratoire CEMR, Équipe de Recherche, Matériaux et Physique Nucléaire, BP: 10662 Niamey, Niger.
HALIDOU Ibrahim
Université Abdou Moumouni de Niamey, Laboratoire CEMR, Équipe de Recherche, Matériaux et Physique Nucléaire, BP: 10662 Niamey, Niger.
O. Briot
Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier FR 34095, France.
S. Juillaguet
Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier FR 34095, France.
H. Peyre
Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier FR 34095, France.
Raymond Aznar
Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier FR 34095, France.
Edouard Chauvau
Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier FR 34095, France.
*Author to whom correspondence should be addressed.
Abstract
We have produced thin film samples of cubic ZnS by the chemical bath method. These samples were synthesized using zinc chloride, thiourea, sodium citrate and ammonia solutions at varied deposition time from 24h to 96h. X-ray diffraction (XRD), transmittance and photoluminescence (PL) analyses provided the physical characteristics of cubic ZnS films with crystal plane orientations (2 0 0) and (2 2 2), lattice parameters of 5.648 Å and an atomic plane distance d=1.412 Å. The grain size calculed are 16.53 nm and 17.12 nm. PL revealed deep defects in the gap with peaks in the visible, with prominent emissions at 430 nm (blue) and 510 nm (green). The measured transmittance of the films is 88.6%.
Keywords: ZnS thin films, optoelectronic devices, X-ray diffraction (XRD), transmittance and photoluminescence (PL)